2 edition of n-N isotype gallium indium arsenide/indium-phosphide heterojunction found in the catalog.
n-N isotype gallium indium arsenide/indium-phosphide heterojunction
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Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs).
Indium and gallium are elements of the periodic table while arsenic is a made of these chemical groups are referred to as "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. Gallium arsenide (GaAs) is n-N isotype gallium indium arsenide/indium-phosphide heterojunction book compound of the elements gallium and is a III-V direct band gap semiconductor with a zinc blende crystal structure.
Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical al formula: GaAs.
A characterization of the chemical vapor deposition of gallium arsenide and indium phosphide in the hydride and chloride systems Creator: Meyer, Douglas John, Publication Date: Language: English Physical Description: vi, leaves: ill.
; 28 cm. Layered semiconductor neutron detectors. DOEpatents. Mao, Samuel S; Perry, Dale L. Room temperature operating solid state hand held neutron detectors integrate one or. Temperature coefficients and radiation induced DLTS spectra of MOCVD grown n(+)p InP solar cells. NASA Technical Reports Server (NTRS) Walters, Robert J.; Statler, Richard L.; Sum.
PW16 OPTO Abstracts Lr - Free ebook download as PDF File .pdf), Text File .txt) or read book online for free. optoelectronics.